SND1019DNAQ-8/TR - MOSFET

Product

SND1019DNAQ-8/TR

SND1019DNAQ Dual N-Channel, 100V, 46A，Power MOSFET The SND1019DNAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SND1019DNAQ is in compliance with RoHS.

Inquiry Download Sample Application

Product Parameter

Configuration：Dual N
VDS (V) (Max.)：100
VGS(V) (Max.)：+20V/-16V
VGS(th) (V) (Typ.)：1.6/2.0/2.4
Ron(mΩ)@ 10V：/14.5/19
Ron(mΩ)@ 4.5V：/20.5/28
Id(A)：46
MPQ：5k
Package：PDFN5*6-8L
State：Active

Download

SND1019DNAQ-datasheet-V1.0-en.pdf Size：659.65 KB Download

Product: CAN; LIN; MOSFET; RS485; RS422; RS232; POWER; TVS

Application: Automotive; Industry; Energy Storage And BMS; Ladder Control; Electric Power

News: Company News; Technical Information

Technical Support: Sample Application; Cross-reference Search; Technical Documents; Suggested Feedback

About SIT: Company Profile; Contact Us

Contact Us

Address: Room 1401, Headquarters Building, Changsha Zhongdian Software Park, No. 39, Jianshan Road, Changsha Hi-tech Development Zone, Changsha City, Hunan Province

Shanghai: No.88, Shangke Road, Pudong District, Shanghai

Shenzhen: 24F IMT Tower, No,1 Gaoxin South Road 7th Avenue, Nanshan, Shenzhen

Service-Tel: 18684986553

Service: service@sitcores.com

Recruit: tinachen@sitcores.com