Product

SPM0652DRAQ-8/TR

SPM0652DRAQ Single P-Channel, -60V, -27A Power MOSFET The SPM0652DRAQ is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, power switch and charging circuit. Standard Product SPM0652DRAQ is in compliance with RoHS.

Product Parameter
  • Configuration:Single P
  • VDS (V) (Max.):-60
  • VGS(V) (Max.):±20V
  • VGS(th) (V) (Typ.):-1/-2/-3
  • Ron(mΩ)@ 10V:/35/52
  • Ron(mΩ)@ 4.5V:/45/67
  • Id(A):-27
  • MPQ:5k
  • Package:PDFN3333-8L
  • State:Sample
Product
CAN
LIN
MOSFET
RS485
RS422
RS232
POWER
TVS
Application
Automotive
Industry
Energy Storage And BMS
Ladder Control
Electric Power
News
Company News
Technical Information
Technical Support
Sample Application
Cross-reference Search
Technical Documents
Suggested Feedback
About SIT
Company Profile
Contact Us
Contact Us

Address: Room 1401, Headquarters Building, Changsha Zhongdian Software Park, No. 39, Jianshan Road, Changsha Hi-tech Development Zone, Changsha City, Hunan Province

Shanghai: No.88, Shangke Road, Pudong District, Shanghai

Shenzhen: 24F IMT Tower, No,1 Gaoxin South Road 7th Avenue, Nanshan, Shenzhen

Service-Tel: 18684986553

Service: service@sitcores.com

Recruit: tinachen@sitcores.com

Contact Us

Copyright © 2020 Hunan Silicon Internet of Things Technology Co., Ltd  湘ICP备2022017381号