SND0311R5DRA-8/TR - NMOS

Product

SND0311R5DRA-8/TR

The SND0311R5DRA is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DCDC conversion, power switch and charging circuit. Standard Product SND0311R5DRA is in compliance with RoHS

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Product Parameter

Configuration：Dual N
VDS (V) (Max.)：30
VGS(V) (Max.)：±20V
VGS(th) (V) (Typ.)：1.1/1.6/2.1
Ron(mΩ)@ 10V：9.5/11.5
Ron(mΩ)@ 4.5V：115/155
Id(A)：9.8
MPQ：5k
Package：PDFN3333-8L
State：Active

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SND0311R5DRA-datasheet-V1.0-en.pdf Size：637.46 KB Download

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