SNM062R2DNA- 8/TR - NMOS

Product

SNM062R2DNA- 8/TR

The SNM062R2DNA is N-Channel enhancement MOS Field Effect Transistor. Uses advanced Split Gate technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance DC-DC conversion, power switch and charging circuit. Standard Product SNM062R2DNA is in compliance with RoHS.

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Product Parameter

Configuration：Single N
VDS (V) (Max.)：60
VGS(V) (Max.)：±20V
VGS(th) (V) (Typ.)：2.5/3.0/3.5
Ron(mΩ)@ 10V：1.8/2.2
Ron(mΩ)@ 4.5V：/
Id(A)：187
MPQ：5k
Package：PDFN5*6-8L
State：Active

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SNM062R2DNA-datasheet-V0.1-en.pdf Size：1.01 MB Download

Product: CAN; LIN; SBC; MOSFET; RS485; RS422; RS232; POWER; TVS

Application: Automotive; Industry; Energy Storage And BMS; Ladder Control; Electric Power

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